SUPPORT

Concept of ALD

  • Atomic layer deposition (ALD) is a self-limiting film growth method by the alternate exposure of chemical species
  • Atomic later deposition (ALD) consists of essentially four steps 1. Precursor exposure
    2. Purging of the precursors and by-products
    3. Exposure of the reactant
    4. Purging of the reactants and by-products

ALD Advantages

  • Good Conformality

  • Atomic Thickness Control

  • Low Impurity

ALD Advantages

  • Memory DRAM
    PRAM
    RRAM
  • Si devices Gate Stack
    Plug
    Metallizations
    Contact
  • Display TFT-LCD
    OLED
    Plasma Display
    TFEL
    FED
  • MEMS/NEMS Nano robot
    Nano motor
  • Nanomaterials Org/Inorg
    Nanolaminates
    Nanowire
    Nanotube
    2D materials
  • Emerging devicesNW/NT devices
    Graphene/CNT devices
    Optoelectronics
  • Energy applications Fuel cell
    Solar cell
    Battery electrode
  • ETC Functional Coating
    Bio applications
    Gas permeation barrier